Semiconductor device with air gap and method for fabricating the same

摘要

A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure formed adjacent to a sidewall of the first conductive structure, and an insulation structure including an air gap that is formed between the first conductive structure and the second conductive structure, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer that is formed over the second conductive pattern, and a third conductive pattern that is formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap.

主权项

1. A semiconductor device comprising:
a first conductive structure including a first conductive pattern, formed over a substrate; a second conductive structure formed adjacent to a sidewall of the first conductive structure, over the substrate; and an insulation structure including an air gap formed between the first conductive structure and the second conductive structure, over the substrate, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer formed over the second conductive pattern, and a third conductive pattern formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap.