| 发明名称 | Semiconductor device including a material to absorb thermal energy | ||
| 摘要 | A semiconductor device includes a semiconductor chip and a first material including molecules that are configured to absorb thermal energy by reversibly changing a spatial molecular structure of the molecules. | ||
| 申请公布号 | US9165847(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201313866150 | 申请日期 | 2013.04.19 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Mahler Joachim;Otremba Ralf;Hosseini Khalil |
| 分类号 | H01L23/427;H01L23/28;H01L21/56;H01L23/31;H01L23/36;H01L23/42;H01L23/495;H01L23/498 | 主分类号 | H01L23/427 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor chip; and a first material comprising molecules that are configured to absorb thermal energy by reversibly changing a spatial molecular structure of the molecules, wherein changing the spatial molecular structure comprises a transition from a first isomer of the molecules to a second isomer of the molecules, wherein the semiconductor chip comprises a power semiconductor chip. | ||
| 地址 | Villach AT | ||