发明名称 Testing device and testing method for quantum battery using semiconductor probe
摘要 This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.
申请公布号 US9164149(B2) 申请公布日期 2015.10.20
申请号 US201114355329 申请日期 2011.10.30
申请人 Kabushiki Kaisha Nihon Micronics;Guala Technology Co., Ltd. 发明人 Dewa Harutada;Hiwada Kiyoyasu;Nakazawa Akira;Terakado Nobuaki
分类号 G01R31/02;G01R31/36;H01M10/48;B82Y10/00;G01R1/067 主分类号 G01R31/02
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A semiconductor probe comprising: a support; a conductive electrode laminated on the support; and a metal oxide semiconductor layer made of a metal oxide semiconductor laminated on the conductive electrode, wherein: the semiconductor probe is configured to be brought into contact with a surface of a charging layer of a secondary battery during production of the secondary battery to evaluate current-voltage and charge-discharge characteristics of the charging layer of the secondary battery in production; and a secondary battery construction is formed by contacting the semiconductor probe to the surface of the charging layer of the secondary battery.
地址 Tokyo JP