Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration

摘要

Structure and method for fabricating a barrier layer that separates an electromechanical device and a CMOS device on a substrate. An example structure includes a protective layer encapsulating the electromechanical device, where the barrier layer may withstand an etch process capable of removing the protective layer, but not the barrier layer. The substrate may be silicon-on-insulator or a multilayer wafer substrate. The electromechanical device may be a microelectromechanical system (MEMS) or a nanoelectromechanical system (NEMS).

主权项

1. A method for fabricating an integrated semiconductor device structure on a substrate, the method comprising:
disposing an electromechanical device on said substrate, the electromechanical device including an anchor and a cantilever beam connected to the anchor, the anchor and the cantilever beam positioned above the substrate, the cantilever beam extending from the anchor and is enabled for mechanical movement; disposing a complementary metal oxide semiconductor (CMOS) device proximate the electromechanical device on said substrate; encapsulating the electromechanical device and the CMOS device with a protective layer, a portion of the protective layer positioned directly below the anchor and between the anchor and the substrate; selectively removing at least a portion of the protective layer between the electromechanical device and the CMOS device; and filling the removed portion with a barrier layer having a higher etch grade than the protective layer, and wherein the barrier layer separates the CMOS device and the electromechanical device.