发明名称 Light emitting device, driving method of light emitting device and electronic device
摘要 By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
申请公布号 US9165952(B2) 申请公布日期 2015.10.20
申请号 US201414524040 申请日期 2014.10.27
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Akiba Mai;Koyama Jun
分类号 H01L27/12;G09G3/32;H01L27/15;H01L27/32;G09G3/20;G09G3/22 主分类号 H01L27/12
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A light-emitting device comprising: a first transistor, a second transistor, and a third transistor; a first wiring, a second wiring, and a third wiring; a capacitor; and a light-emitting element, wherein one of a source and a drain of the first transistor is electrically connected to the first wiring, the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one electrode of the capacitor, and a gate of the first transistor is electrically connected to the second wiring, and wherein one of a source and a drain of the second transistor is electrically connected to the third wiring, and the other of the source and the drain of the second transistor is electrically connected to the light-emitting element, the other electrode of the capacitor, and one of a source and a drain of the third transistor.
地址 Atsugi-shi, Kanagawa-ken JP