| 发明名称 |
Through-silicon via resonators in chip packages and methods of assembling same |
| 摘要 |
A process of forming a through-silicon via (TSV) in a die includes forming a movable member in the TSV that can be actuated or that can be a sensor. Action of the movable member in the TSV can result in a logic word being sent from the TSV die to a subsequent die. The TSV die may be embedded in a substrate. The TSV die may also be coupled to a subsequent die. |
| 申请公布号 |
US9162867(B2) |
申请公布日期 |
2015.10.20 |
| 申请号 |
US201113977122 |
申请日期 |
2011.12.13 |
| 申请人 |
Intel Corporation |
发明人 |
Teh Weng Hong;Sankman Robert Bob L. |
| 分类号 |
H01L25/065;B81B3/00;B81C1/00;G01P15/135;H01L23/48;H01H1/00;H01L23/13;H01L23/498;H01L21/56;H01L23/00 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
Greaves John N. |
| 主权项 |
1. A through-silicon via (TSV) microelectronic die, comprising:
an active surface and a backside surface; a movable member disposed in the TSV that has a fixed first end at a location closer to the active surface than to the backside surface and that has a free end at a location closer to the backside surface than to the active surface; and a fixed electrode disposed in the TSV closer to the free end, wherein the fixed electrode is capable of moving the free end, or the fixed electrode is capable of sensing motion of the free end, wherein the movable member is a bimetallic structure including a first component and a second component. |
| 地址 |
Santa Clara CA US |
