发明名称 |
High-frequency circuit module |
摘要 |
Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module, an RFIC that performs transmission and reception processes for high-frequency signals, a power amplifier IC that amplifies a transmission signal from the RFIC, and a duplexer that separates a transmission signal outputted from the power amplifier IC to an antenna and a reception signal that is inputted from the antenna to the RFIC are formed on the top surface thereof. The duplexer is disposed between the RFIC and the power amplifier IC. |
申请公布号 |
US9166765(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201313963775 |
申请日期 |
2013.08.09 |
申请人 |
TAIYO YUDEN CO., LTD. |
发明人 |
Nakamura Hiroshi;Igarashi Tomohiro |
分类号 |
H04B1/50;H03H7/46;H04L5/14;H01L23/373;H05K1/02;H04B1/00;H03H9/05;H03H9/08 |
主分类号 |
H04B1/50 |
代理机构 |
Chen Yoshimura LLP |
代理人 |
Chen Yoshimura LLP |
主权项 |
1. A high-frequency circuit module, comprising:
a circuit substrate having laminated insulating layers and conductive layers; a high-frequency IC that performs a transmission process and a reception process for a high-frequency signal; a power amplifier IC that amplifies a transmission signal from the high-frequency IC; and a duplexer that separates a transmission signal and a reception signal, the transmission signal being outputted from the power amplifier IC toward an antenna, the reception signal being inputted from the antenna toward the high-frequency IC, wherein a wiring length of a signal line that is used for sending a transmission signal that has been amplified by the power amplifier IC to the duplexer is shorter than a signal line that is used for sending to the power amplifier IC a transmission signal that is outputted from the high-frequency IC and that has not been amplified, wherein the power amplifier IC is mounted in a peripheral portion of the circuit substrate, and wherein the circuit substrate comprises: a core layer that is thicker than other conductive layers; a terminal electrode formed in a peripheral portion on a bottom surface of the circuit substrate; a ground electrode that is formed in a region inside of an area where the terminal electrode is formed on the bottom surface of the circuit substrate; and a via conductor for heat dissipation that connects the ground electrode to the core layer. |
地址 |
Tokyo JP |