Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus and recording medium

摘要

There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a thin film containing a specific element and having a prescribed composition on a substrate by performing a cycle of alternately performing n times, where n is an integer of one or more: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by performing a set of alternately or simultaneously performing m times, where m is an integer of one or more:
supplying a first source gas containing the specific element and a halogen-group to the substrate, andsupplying a second source gas containing the specific element and an amino-group to the substrate; and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.