| 发明名称 | Applying a voltage-delay correction to a non-defective memory block that replaces a defective memory block based on the actual location of the non-defective memory block | ||
| 摘要 | In an embodiment, a defective memory block is replaced with a non-defective memory block, and a voltage-delay correction is applied to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. | ||
| 申请公布号 | US9165681(B2) | 申请公布日期 | 2015.10.20 |
| 申请号 | US201414224543 | 申请日期 | 2014.03.25 |
| 申请人 | Micron Technology, Inc. | 发明人 | Sarin Vishal;Nguyen Dzung H.;Radke William H. |
| 分类号 | G11C7/00;G11C29/04;G11C29/00 | 主分类号 | G11C7/00 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method of operating a memory device, comprising: replacing a defective memory block with a non-defective memory block; and applying a voltage-delay correction to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. | ||
| 地址 | Boise ID US | ||