Non-volatile memory device

摘要

According to one embodiment, a non-volatile memory device includes a plurality of electrodes, at least one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film contacts the conductive layers, and extends in the first direction along the semiconductor layer between the conductive layers and the semiconductor layer. The second insulating film is provided between the first insulating film and the semiconductor layer. The first insulating film includes a first portion located between the conductive layers and the second insulating film, and a second portion located between the interlayer insulating film and the second insulating film.

主权项

1. A non-volatile memory device comprising:
a plurality of electrodes arranged side by side in a first direction with an interlayer insulating film interposed; at least one semiconductor layer extending into the plurality of electrodes in the first direction; conductive layers provided between each of the plurality of electrodes and the semiconductor layer, the conductive layers being separated from each other in the first direction; a first insulating film in contact with the conductive layers, and extending in the first direction along the semiconductor layer between the conductive layers and the semiconductor layer; and a second insulating film provided between the first insulating film and the semiconductor layer, the second insulating film having an energy bandgap wider than an energy bandgap of the first insulating film, the first insulating film including a first portion located between the conductive layers and the second insulating film, and a second portion located between the interlayer insulating film and the second insulating film, and a thickness of the first portion in a direction perpendicular to the first direction is larger than a thickness of the second portion in the direction perpendicular to the first direction.