Semiconductor device and method for fabricating the same

摘要

Provided is a method for fabricating a semiconductor device including the following steps. A silicon-containing conductive layer is formed on a substrate. Then, a dielectric layer is formed around the silicon-containing conductive layer. A portion of the dielectric layer is removed to expose a first sidewall of the silicon-containing conductive layer. A shielding structure is formed on a partial surface of the silicon-containing conductive layer, and the shielding structure exposes at least the first sidewall. A metal layer is formed on the substrate to cover the silicon-containing conductive layer not covered by the shielding structure. A salicide process is performed to form a silicide layer.

主权项

1. A semiconductor device, comprising:
a silicon-containing conductive layer; a dielectric layer located around the silicon-containing conductive layer; a silicide layer located on the silicon-containing conductive layer; and a shielding structure covering a portion of the silicide layer, wherein the shielding structure comprises a top shielding layer covering a top surface of the silicide layer, and one portion of a sidewall of the silicide layer is covered by the dielectric layer and the other portion of the sidewall of the silicide layer is exposed.