Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures

摘要

Methods of fabricating a semiconductor structure include implanting ion into a second region of a strained semiconductor layer on a multi-layer substrate to amorphize a portion of crystalline semiconductor material in the second region of the strained semiconductor layer without amorphizing a first region of the strained semiconductor layer. The amorphous region is recrystallized, and elements are diffused within the semiconductor layer to enrich a concentration of the diffused elements in a portion of the second region of the strained semiconductor layer and alter a strain state therein relative to a strain state of the first region of the strained semiconductor layer. A first plurality of transistor channel structures are formed that each comprise a portion of the first region of the semiconductor layer, and a second plurality of transistor channel structures are formed that each comprise a portion of the second region of the semiconductor layer.

主权项

1. A method of fabricating a semiconductor structure, comprising:
providing a multi-layer substrate, including:
a base substrate,a buried oxide layer over a surface of the base substrate, anda strained semiconductor layer over the buried oxide layer on a side thereof opposite the base substrate, the strained semiconductor layer comprising crystalline semiconductor material; implanting ions into a second region of the strained semiconductor layer without implanting ions into a first region of the strained semiconductor layer and converting a portion of the crystalline semiconductor material in the second region of the strained semiconductor layer to amorphous material such that the second region of the strained semiconductor layer has an amorphous region and an underlying crystalline region; recrystallizing the amorphous region; diffusing elements from one portion of the second region of the strained semiconductor layer into another portion of the strained semiconductor layer so as to enrich a concentration of the diffused elements in the another portion of the second region of the strained semiconductor layer and alter a strain state of the second region of the strained semiconductor layer such that the second region of the strained semiconductor layer is in a strain state differing from a strain state of the first region of the strained semiconductor layer; and forming a first plurality of transistor channel structures each comprising a portion of the first region of the semiconductor layer and a second plurality of transistor channel structures each comprising a portion of the second region of the semiconductor layer.