Semiconductor laser mounting with intact diffusion barrier layer

摘要

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

主权项

1. An article of manufacture comprising:
a first contact surface of a semiconductor laser chip formed to a target surface roughness having a maximum peak to valley height of between approximately 2% and 8% of a barrier layer thickness; a barrier layer having the barrier layer thickness applied to the first contact surface, the barrier layer being distinct from the semiconductor laser chip and comprising a non-metallic, electrically-conducting compound; and a carrier mounting to which the semiconductor laser chip is soldered along the barrier layer using a solder composition, the semiconductor laser chip being soldered to the carrier mounting by a soldering process comprising melting the soldering composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs, the soldering process occurring such that the barrier layer remains intact to minimize diffusion of elements from the carrier mount, the solder composition, and/or the semiconductor laser chip across the barrier layer to maintain a substantially temporally consistent composition of both the solder composition along the first contact surface and a crystal structure of the semiconductor laser chip.