β-sialon and method of manufacturing thereof, and light-emitting device

摘要

β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.

主权项

1. β-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein in a form of solid solution, wherein spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g, and z is in a range of 0 to about 4.2.