发明名称 Method of a fabricating display substrate and method of fabricating a display device using the same
摘要 A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.
申请公布号 US9166203(B2) 申请公布日期 2015.10.20
申请号 US201414299168 申请日期 2014.06.09
申请人 Samsung Display Co., Ltd. 发明人 Jeon Woo-Seok
分类号 H01L21/00;H01L51/56;H01L27/32;H01L27/12;H01L21/4763;H01L29/66;H01L21/033 主分类号 H01L21/00
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A method of fabricating a display substrate, comprising: forming a gate electrode on a substrate; forming a gate insulating layer to cover the gate electrode; forming an active layer on the gate insulating layer; forming a metal layer on the active layer; forming a first mask pattern on the metal layer to face a first region of the active layer; forming a second mask pattern on the metal layer to face a second region and a third region of the active layer; etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern; removing the first mask pattern; and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.
地址 Yongin, Gyeonggi-Do KR