发明名称 |
Method of a fabricating display substrate and method of fabricating a display device using the same |
摘要 |
A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode. |
申请公布号 |
US9166203(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201414299168 |
申请日期 |
2014.06.09 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Jeon Woo-Seok |
分类号 |
H01L21/00;H01L51/56;H01L27/32;H01L27/12;H01L21/4763;H01L29/66;H01L21/033 |
主分类号 |
H01L21/00 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. A method of fabricating a display substrate, comprising:
forming a gate electrode on a substrate; forming a gate insulating layer to cover the gate electrode; forming an active layer on the gate insulating layer; forming a metal layer on the active layer; forming a first mask pattern on the metal layer to face a first region of the active layer; forming a second mask pattern on the metal layer to face a second region and a third region of the active layer; etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern; removing the first mask pattern; and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode. |
地址 |
Yongin, Gyeonggi-Do KR |