Film forming method

摘要

According to an embodiment of the present disclosure, a method of forming a polyimide film on a substrate is disclosed. Such method can be easily controlled and form a polyimide film applicable as an insulation film. While a wafer is heated at a temperature at which a polyimide film is formed, a cycle, in which the wafer is sequentially supplied with a first processing gas, for example, containing a PMDA-based first monomer, and a second processing gas containing a non-aromatic monomer, for example, an HMDA-based second monomer, is performed for a predetermined number of times. When the processing gases are switched, a replacement gas is supplied into a reaction tube so that the monomers are not mixed together under the atmosphere in the reaction tube.

主权项

1. A method of forming a polyimide film on a surface of a substrate by dehydration condensation of a first monomer including a bifunctional acid anhydride and a second monomer including a bifunctional amine, the method comprising:
loading the substrate into a processing chamber; heating the substrate at a temperature for forming a polyimide film; supplying the substrate with a first processing gas containing the first monomer and a second processing gas containing the second monomer; and evacuating at least one of the first processing gas and the second processing gas from the processing chamber, wherein the first and second monomers are aromatic and non-aromatic monomers, respectively, wherein supplying the substrate with the processing gases comprises performing a cycle a predetermined number of times, the cycle including supplying a first processing gas containing the first monomer to the substrate, supplying a second processing gas containing the second monomer to the substrate, and supplying a replacement gas in the processing chamber between supplying the first processing gas and supplying the second processing gas thereby replacing atmosphere in the processing chamber by the replacement gas, and wherein a film forming rate is at least 1.2 nm/cycle, and wherein the second monomer as a non-aromatic monomer is HMDA.