| 摘要 |
A vertical memory device includes channels, gate lines, first separation insulation film patterns, and second separation insulation film patterns. The channels are extended in a first direction perpendicular to the upper side of a substrate. The gate lines are extended to surround the outer sidewalls of the channels, and are separately stacked in the first direction. The first separation insulation film patterns pass through the gate lines in the first direction. The second separation insulation film patterns are formed between the first separation insulation film patterns to face each other, and pass through a part of the gate lines. |
