| 摘要 |
The present invention is to provide a semiconductor memory device which prevents variations in a threshold value of a memory cell. To achieve the stated purpose, a method for programming a flash memory, according to the present invention, comprises the following steps: setting a voltage for a program or a voltage for program prevention in a bit line by using program data, and applying a program pulse to a selected page; and verifying the program of the selected page. When a failed shift memory cell changed from pass to failure is generated according to a verification result, the method further comprises a step for setting a relief voltage which alleviates a voltage of a next program pulse in the bit line of the corresponding failed shift memory cell. |
