发明名称 CIRCUIT AND METHOD FOR GENERATING SENSE AMP ENABLE SIGNAL FOR STATIC RAM, AND STATIC RAM COMPRISING THE SAME CIRCUIT
摘要 Disclosed are a sense AMP enable signal generating circuit for SRAM, a method thereof, and SRAM with the generating circuit. The sense AMP enable signal generating circuit of the present invention uses one or more cell columns selected from a cell array of the SRAM as a tracking cell column, thereby not requiring a separate replication or dummy word line. When a read operation is started as one among word lines is operated in a logic high state, the sense AMP enable signal generating circuit of the present invention generates a tracking signal (TRKBL) by tracking a voltage change in a bit line of the tracking cell column, and generates a sense AMP enable signal by using the TRKBL.
申请公布号 KR20150117109(A) 申请公布日期 2015.10.19
申请号 KR20140042434 申请日期 2014.04.09
申请人 ADTECHNOLOGY, LTD. 发明人 KIM, YOUNG SEUNG;JUNG, MIN CHUL;NAM, HYO YOON;LEE, HYUN SEOK
分类号 G11C11/413;G11C11/416 主分类号 G11C11/413
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