发明名称 |
CIRCUIT AND METHOD FOR GENERATING SENSE AMP ENABLE SIGNAL FOR STATIC RAM, AND STATIC RAM COMPRISING THE SAME CIRCUIT |
摘要 |
Disclosed are a sense AMP enable signal generating circuit for SRAM, a method thereof, and SRAM with the generating circuit. The sense AMP enable signal generating circuit of the present invention uses one or more cell columns selected from a cell array of the SRAM as a tracking cell column, thereby not requiring a separate replication or dummy word line. When a read operation is started as one among word lines is operated in a logic high state, the sense AMP enable signal generating circuit of the present invention generates a tracking signal (TRKBL) by tracking a voltage change in a bit line of the tracking cell column, and generates a sense AMP enable signal by using the TRKBL. |
申请公布号 |
KR20150117109(A) |
申请公布日期 |
2015.10.19 |
申请号 |
KR20140042434 |
申请日期 |
2014.04.09 |
申请人 |
ADTECHNOLOGY, LTD. |
发明人 |
KIM, YOUNG SEUNG;JUNG, MIN CHUL;NAM, HYO YOON;LEE, HYUN SEOK |
分类号 |
G11C11/413;G11C11/416 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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