发明名称 CLEANING COMPOSITIONS FOR REMOVING CONTAMINANT AFTER CU CHEMICAL MECHANICAL POLISHING
摘要 The present invention relates to a composition for eliminating, from a substrate, organic or inorganic contaminant materials which is useful in the manufacturing of a semiconductor and an IT circuit board by using a copper metal. The present invention also relates to a cleaning liquid capable of effectively eliminating contaminant materials, which can be generated from a chemical mechanical polishing (CMP) and etching processes, in a process in which a copper metal wiring is applied without any damage to a copper and an insulating film. The cleaning liquid composition of the present invention comprises: based on a total weight percentage of the composition, 4 to 10 wt% of an amine compound; 1 to 10 wt% of a bubble stabilizer and an anti-re-adsorption agent for preventing reverse contamination; 0.1 to 2 wt% of a pH regulator; 0.1 to 2 wt% of a corrosion inhibitor; and deionized water for the remnants. The invention is able to eliminate contamination more effectively than a conventional copper cleaning liquid without any damage to a metal (Cu, Ti, Ta) and an insulating film (TiN, TaN, TEOS) exposed to a cleaning liquid in a copper-based circuit and therefore, it is possible to solve problems of a short circuit, a scratch on a metal surface which can be caused by an erroneous cleaning, and to improve an overall circuit yield.
申请公布号 KR20150117148(A) 申请公布日期 2015.10.19
申请号 KR20140042556 申请日期 2014.04.09
申请人 RAMTECHNOLOGY CO., LTD. 发明人 GIL, JUN ING;BANG, CHEOL WON;KIM, HAK MUK;PARK, JEONG JUN;JANG, YONG SU;LEE, MIN TAE;SHIM, GEUM BI
分类号 C11D7/60;C11D7/32;C23G1/10 主分类号 C11D7/60
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