NONVOLATILE MEMORY DEVICE

摘要

According to the present invention, a nonvolatile memory device comprises: a first memory block connected to first word lines; a second memory block arranged with the first memory block in a vertical direction, and connected to second word lines; first pass transistors to enable the first word lines; and second pass transistors to enable the second word lines. The first and second pass transistors are arranged with the first and second memory blocks in a horizontal direction.