半导体结构及其形成方法;SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

在实施例中提供一种半导体结构及其形成方法。半导体结构包括第一基板及金属垫形成在第一基板上。半导体结构还包括晶种层形成在金属垫上及导体柱形成在晶种层上。此外，晶种层具有侧壁及底表面，且晶种层的侧壁及底表面之间的角度介于约20度至约90度。 A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a seed layer formed over the metal pad and a conductive pillar formed over the seed layer. In addition, the seed layer has a sidewall and a bottom surface, and an angle between the sidewall and the bottom surface of the seed layer is in a range from about 20°