在被处理体之处理中，能抑制因电浆处理装置之静电夹头之除电导致之残渣的产生。被处理体之处理方法包含：步骤ST1，其系将被处理体以静电吸附于电浆处理装置之静电夹头；被处理体在基板上具有有机聚合物层及光阻遮罩；步骤ST2，其系藉第1气体之电浆藉由光阻遮罩而对有机聚合物层进行蚀刻；步骤ST3，其系一面产生第2气体之电浆一面使被处理体从静电夹头脱离；及步骤ST4，其系进行光阻遮罩之剥离。第2气体系氧气、或是原子量小于氩气之稀有气体与氧气之混合气体。; a step ST2 of etching the organic polymer layer through the resist mask with a plasma of a first gas; a step ST3 of detaching the processing target object from the electrostatic chuck while a plasma of a second gas is generated; and a step ST4 of removing the resist mask. The second gas is oxygen gas or a mixed gas of oxygen gas and a noble gas with a smaller atomic weight than argon gas.
