半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

实施形态的半导体装置系具备：第1GaN系半导体层；第2GaN系半导体层，其系设于第1GaN系半导体层上，能隙比第1GaN系半导体层大；源极电极，其系设于第2GaN系半导体层上；汲极电极，其系设于第2GaN系半导体层上；闸极电极，其系于源极电极与汲极电极之间，使闸极绝缘膜介于与第1GaN系半导体层之间而设，与第1GaN系半导体层之间的第2GaN系半导体层的膜厚系比源极电极与第1GaN系半导体层之间的第2GaN系半导体层的膜厚更薄；p型的第3GaN系半导体层，其系于闸极电极的汲极电极侧的端部与第2GaN系半导体层之间，使闸极绝缘膜介于与闸极电极之间而设。; a second GaN layer on the first GaN layer and having a bandgap larger than that of the first GaN layer; a source electrode on the second GaN layer; a drain electrode on the second GaN layer; a gate electrode between the source electrode and the drain electrode, a gate insulating film between the gate electrode and the first GaN layer, a film thickness of the second GaN layer between the gate electrode and the first GaN layer being thinner than that of the second GaN layer between the source electrode and the first GaN layer; and a p-type third GaN layer between the second GaN layer and an end portion on the drain electrode side of the gate electrode, the gate insulating film between the gate electrode and the third GaN layer.