SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention provides a semiconductor device, and a manufacturing method thereof. An air gap area exists between wirings at different intervals in the device. The semiconductor device comprises: a substrate including a first area and a second area; first conductive patterns which are arranged on the first area of the substrate at a first interval; second conductive patterns which are arranged on the second area of the substrate at a second interval wider than the first interval; and an interlayer insulating film which is interposed between the second conductive patterns, and has at least one recess area having a width corresponding to the size of the first interval.