SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention provides a semiconductor device, and a manufacturing method thereof. In the semiconductor device, mechanical properties can be improved since another air gap area does not exist right on and under an air gap area. The semiconductor device comprises: a first wiring layer including first wirings which is arranged on a substrate, and extended in a first direction; a second wiring layer including second wirings arranged by being overlapped with the first wirings on the first wiring layer; and a first air gap area which is arranged on any one among the first wirings and the second wirings, and is not arranged on the other.