发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device includes a substrate which includes a cell region and a connection region. Gate electrodes are vertically stacked on the cell region of the substrate. Pads to be electrically connected to a peripheral circuit are horizontally extended from the gate electrodes to the connection region. The pads form a step structure on the connection region and are electrically connected to contact plugs with different vertical lengths. The pads have thicker regions than the gate electrodes.
申请公布号 KR20150116681(A) 申请公布日期 2015.10.16
申请号 KR20140041916 申请日期 2014.04.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN, TAE HWAN;PARK, JIN TAEK
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
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