形成图案之方法及制造半导体装置之方法;METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

在一项实施例中，一种用于形成图案之方法包含：在基板上形成导引层；在该导引层上形成高分子嵌段共聚物之共聚物层；及藉由自组装该共聚物层形成具有相分离循环d之相分离结构。该高分子嵌段共聚物包含第一聚合物及第二聚合物。该导引层包含安置于该基板上之第一区域及第二区域。该第一区域及该第二区域之宽度分别系大约(d/2)×n及(d/2)×m。该第一区域及该第二区域两者将不被与该第一聚合物及该第二聚合物中之任一者钉紮在一起。该第一区域与该第二区域之表面能量系彼此不同的。整数n及m系奇数。值d系该高分子嵌段共聚物之相分离循环。; and forming a phase-separation structure with a phase-separation cycle d by self-assembling the copolymer layer. The high-molecular block copolymer includes a first and a second polymer. The guide layer includes a first and a second region disposed on the substrate. Widths of the first and second region respectively are approximately (d/2)×n and (d/2)×m. Both of the first and second region are to be pinned with none of the first and second polymer. Surface energies of the first and second region are different from one another. Integers n and m are odd numbers. Value d is a phase-separation cycle of the high-molecular block copolymer.