| 摘要 |
<p>WITH THE INVENTED DICING METHOD, BY INCREASING THE COHESIVE STRENGTH WHILE DECREASING THE ADHESIVE STRENGTH OF AN ULTRAVIOLET-CURING ADHESIVE (120) IN ADVANCE, MIXING OF THE ULTRAVIOLET-CURING ADHESIVE LAYER (120) OF AN ADHESIVE SHEET WITH A DIE ATTACH FILM (130) ON A DICING LINE CAN BE DECREASED AND PICKUP FAILURES CAN BE REDUCED, WHEN PICKING UP CHIPS HAVING A DIE ATTACH FILM (130) AFTER DICING. THE DICING METHOD FOR A SEMICONDUCTOR WAFER (140) WITH A DIE-ATTACH FILM (130) COMPRISES A FIRST GLUING STEP IN WHICH A DIE ATTACH FILM (130) IS AFFIXED TO AN ADHESIVE SHEET HAVING AN ULTRAVIOLET-CURING ADHESIVE (120) LAMINATED ON A BASE MATERIAL FILM, A SECOND GLUING STEP IN WHICH A SEMICONDUCTOR WAFER (140) IS AFFIXED TO THE OPPOSITE SIDE OF THE DIE ATTACH FILM (130) AFFIXED TO THE ADHESIVE SHEET, AN ULTRAVIOLET IRRADIATION STEP IN WHICH THE ULTRAVIOLET-CURING ADHESIVE (120) IS IRRADIATED WITH ULTRAVIOLET LIGHT, AND A DICING STEP IN WHICH THE SEMICONDUCTOR WAFER (140) AND THE DIE ATTACH FILM (130) AFFIXED TO THE ADHESIVE SHEET ARE DICED.</p> |
