| 发明名称 |
DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A T-SHAPE IN THE METAL GATE LINE-END |
| 摘要 |
A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void. |
| 申请公布号 |
US2015294874(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414253156 |
申请日期 |
2014.04.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
LIN CHIEN-CHIH;YEH CHIEN-HUNG;SHEN GUAN-JIE;CHANG CHIA-DER |
| 分类号 |
H01L21/28;H01L21/3213;H01L29/423;H01L21/311;H01L29/66;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a metal gate structure in a semiconductor device, the method comprising:
removing a dummy poly gate; removing interlayer (IL) oxide and shallow trench isolation (STI) using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device; depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. |
| 地址 |
Hsinchu TW |
