发明名称 OPTICAL WAVEGUIDE ELEMENT AND OPTICAL MODULATOR
摘要 An optical waveguide element includes: a rib waveguide and a pair of slab portions including a first slab portion and a second slab portion connected to both sides of the rib portion so as to sandwich the rib portion. The rib portion has a cross-sectional dimension which allows the propagation of a fundamental mode and a higher order mode in a predetermined single polarization state, and has a first P-type semiconductor and a first N-type semiconductor forming a PN junction, the first slab portion has a second P-type semiconductor and a P-type conductor connected to each other, the second P-type semiconductor is connected to the first P-type semiconductor of the rib portion, the second slab portion has a second N-type semiconductor and an N-type conductor connected to each other, and the second N-type semiconductor is connected to the first N-type semiconductor of the rib portion.
申请公布号 US2015293384(A1) 申请公布日期 2015.10.15
申请号 US201514748331 申请日期 2015.06.24
申请人 FUJIKURA LTD. 发明人 OGAWA Kensuke;GOI Kazuhiro;KUSAKA Hiroyuki
分类号 G02F1/025;G02B6/122;G02F1/00 主分类号 G02F1/025
代理机构 代理人
主权项 1. An optical waveguide element, comprising: a rib waveguide which comprises a core comprising a rib portion and a pair of slab portions comprising a first slab portion and a second slab portion connected to both sides of the rib portion so as to sandwich the rib portion, wherein the rib portion comprises a cross-sectional dimension which allows the propagation of a fundamental mode and a higher order mode in a predetermined single polarization state, and comprises a first P-type semiconductor and a first N-type semiconductor forming a PN junction, the first slab portion comprises a second P-type semiconductor and a P-type conductor connected to each other, and the second P-type semiconductor is connected to the first P-type semiconductor of the rib portion, the second slab portion comprises a second N-type semiconductor and an N-type conductor, and the second N-type semiconductor is connected to the first N-type semiconductor of the rib portion, the first and second P-type semiconductors are made of a semiconductor material comprising a P-type dopant, the first and second N-type semiconductors are made of a semiconductor material comprising an N-type dopant, the P-type conductor is made of a semiconductor material comprising a P-type dopant in a higher concentration than the first and second P-type semiconductors, is electrically connected to a first electrode, and is arranged in a region where the higher order mode propagates, and the N-type conductor s made of a semiconductor material comprising an N-type dopant in a higher concentration than the first and second N-type semiconductor, is electrically connected to the second electrode, and is arranged in a region where the higher order mode propagates.
地址 Tokyo JP