SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a substrate which includes a first region and a second region which are different, a first active pattern which is provided on the substrate of the first region, a second active pattern which is provided on the substrate of the second region, a first gate structure which crosses the first active pattern, a second gate structure which crosses the second active pattern, first source/drain regions which are arranged on the first active pattern of both sides of the first gate structure, second source/drain regions which are arranged on the second active pattern of both sides of the second gate structure, and auxiliary spacers which are limitedly arranged on the first region and cover each lower side of the first source/drain regions.