| 摘要 |
Provided are a nonvolatile memory device, a memory system including the same, and a method for operating the nonvolatile memory device. The nonvolatile memory device comprises: a resistive memory cell; a sensing node; and a sense amplifier connected to the sensing node, and sensing a difference between a voltage level of the sensing node and a reference voltage level or a difference between a current level of the sensing node and a reference current level. When a read fail occurs during a read operation of data stored in the resistive memory cell, a read retry operation is performed after changing a current flowing in the resistive memory cell by changing a voltage difference of both ends of the resistive memory cell. |
