| 摘要 |
To provide a semiconductor device capable of achieving a higher withstand voltage. Provided is a semiconductor device that has: a p-type fourth region in contact with a lower end of a gate trench; a termination trench that is formed in the front surface of the semiconductor substrate, said termination trench being on the outer side of a second region; a p-type lower end p-type region in contact with a lower end of the termination trench; a p-type side surface p-type region, which is in contact with the termination trench side surface on the outer peripheral side, and which is connected to the lower end p-type region, said p-type side surface p-type region being exposed from the front surface of the semiconductor substrate; and a plurality of p-type guard ring regions, which are formed further toward the outer peripheral side than the side surface p-type region, and which are exposed from the front surface. |
