发明名称 ELECTRONIC DEVICE WITH REVERSE BIASED HEMT TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To provide an electronic device having behavior similar to that of a reverse biased Zener diode.SOLUTION: An electronic device 100 includes at least: a first HEMT transistor 106; and bias means 102, 103, 104 capable of at least reverse-biasing the first HEMT transistor by applying a positive voltage between a source 108 and a drain 110 of the first HEMT transistor. The first HEMT transistor is on when the voltage between a gate 112 and the drain is higher than a threshold.</p>
申请公布号 JP2015181154(A) 申请公布日期 2015.10.15
申请号 JP20150034027 申请日期 2015.02.24
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;ALCATEL-LUCENT 发明人 RENE ESCOFFIER
分类号 H01L21/8232;H01L21/338;H01L21/8234;H01L21/8236;H01L27/06;H01L27/088;H01L27/095;H01L29/778;H01L29/812 主分类号 H01L21/8232
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