发明名称 |
ELECTRONIC DEVICE WITH REVERSE BIASED HEMT TRANSISTOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electronic device having behavior similar to that of a reverse biased Zener diode.SOLUTION: An electronic device 100 includes at least: a first HEMT transistor 106; and bias means 102, 103, 104 capable of at least reverse-biasing the first HEMT transistor by applying a positive voltage between a source 108 and a drain 110 of the first HEMT transistor. The first HEMT transistor is on when the voltage between a gate 112 and the drain is higher than a threshold.</p> |
申请公布号 |
JP2015181154(A) |
申请公布日期 |
2015.10.15 |
申请号 |
JP20150034027 |
申请日期 |
2015.02.24 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;ALCATEL-LUCENT |
发明人 |
RENE ESCOFFIER |
分类号 |
H01L21/8232;H01L21/338;H01L21/8234;H01L21/8236;H01L27/06;H01L27/088;H01L27/095;H01L29/778;H01L29/812 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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