| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having low on-resistance and excellent switching characteristics and capable of obtaining high breakdown voltage in both forward and reverse directions.SOLUTION: When a reverse voltage is applied between a first electrode 61 and a second electrode 62 in a state where the first electrode 61 and a gate electrode 66 are short-circuited, the distance between a plurality of gage electrodes 66 is set so that a depletion layer is pinched off in a first portion 64b of a first semiconductor layer between the adjacent gate electrodes 66. |
