| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film transistor having high voltage withstanding ability and a thin film transistor having a high current driving ability on an identical substrate.SOLUTION: In a first thin film transistor, a bottom gate electrode 20 is located below a semiconductor layer through a first gate insulation film 30 and a top gate layer 50 is provided at the side, which faces the bottom gate electrode across the semiconductor layer, through a second gate insulation film 31. In a second thin film transistor, only a bottom gate electrode 20 is provided below a semiconductor layer through a first gate insulation film 30. In a transistor circuit including a thin film transistor formed on an insulative substrate and comprising a semiconductor layer 40, a source region 41, and a drain region 42, the at least one first thin film transistor and the at least one second thin film transistor are formed on an identical substrate. |
