| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region. |
| 申请公布号 |
US2015295071(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201514686338 |
申请日期 |
2015.04.14 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
HIKASA Akihiro |
| 分类号 |
H01L29/739;H01L29/08;H01L29/10;H01L29/423;H01L21/02;H01L29/45;H01L29/49;H01L29/06;H01L29/16;H01L21/311;H01L29/66;H01L29/417 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first conductive-type semiconductor layer; a second conductive-type base region that is arranged in a front surface portion of the semiconductor layer; a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region, an active region being defined therebetween; a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other; a gate electrode that is embedded in the trench; an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface; and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region. |
| 地址 |
Kyoto JP |
