SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A MOSFET includes an SiC layer including main surfaces. The SiC layer includes an a type drift region, a p type body region, and an n type source region. The MOSFET further includes a gate insulating film formed to be located on a channel region, a gate electrode formed to be located above the channel region, the gate insulating film being sandwiched between said gate electrode and said channel region, and a connection electrode which includes a contact portion having a width smaller than a width of the gate electrode, has electric resistance lower than electric resistance of the gate electrode, and is formed on the gate electrode.

主权项

1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer including one main surface and another main surface opposite to said one main surface, said silicon carbide layer including
a drift region which includes said other main surface and has a first conductivity type,a body region which is formed on said drift region and has a second conductivity type, anda source region which includes said one main surface, is formed to sandwich said body region between said source region and said drift region, and has the first conductivity type; a gate insulating film formed to be located on a channel region which is sandwiched between said drift region and said source region in said body region, said channel region including said one main surface; a gate electrode formed to be located above said channel region, said gate insulating film being sandwiched between said gate electrode and said channel region; and a connection electrode which includes a portion having a width smaller than a width of said gate electrode, has electric resistance lower than electric resistance of said gate electrode, and is formed on said gate electrode.