发明名称 |
MIM CAPACITOR STRUCTURE |
摘要 |
The present disclosure relates to a MIM capacitor, and an associated method of formation. In some embodiments, the MIM capacitor has a first electrode having a bottom capacitor metal layer disposed over a semiconductor substrate. A second electrode having a middle capacitor metal layer overlies the bottom capacitor metal layer. A third electrode having a top capacitor metal layer has a stepped structure is laterally and vertically separated from the middle capacitor metal layer by a capacitor dielectric layer continuously extends from a first position between the bottom capacitor metal layer and the middle capacitor metal layer, to a second position between the middle capacitor metal layer and the top capacitor metal layer. The capacitor dielectric layer allows for the MIM capacitor to have a structure that improves fabrication of the capacitor. |
申请公布号 |
US2015295019(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201414249482 |
申请日期 |
2014.04.10 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Wang Chien-Chung;Tseng Wei-Min;Shen Shih-Guo;Chu Huey-Chi;Chiang Wen-Chuan |
分类号 |
H01L49/02;H01L21/28;H01L21/02;H01L21/768;H01L23/58 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A MIM (metal-insulator-metal) capacitor, comprising:
a first electrode comprising a bottom capacitor metal layer disposed over a semiconductor substrate; a second electrode comprising a middle capacitor metal layer overlying the bottom capacitor metal layer; and a third electrode comprising a top capacitor metal layer comprising a stepped structure that is vertically and laterally separated from the middle capacitor metal layer by a capacitor dielectric layer that continuously extends from a first position between the bottom capacitor metal layer and the middle capacitor metal layer, to a second position between the middle capacitor metal layer and the top capacitor metal layer. |
地址 |
Hsin-Chu TW |