AN APPARATUS AND METHOD FOR GROWING A BULK SINGLE CRYSTAL NITRIDE MATERIAL

摘要

An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.

主权项

1. An apparatus for growing nitride bulk single crystal, the apparatus being an autoclave capable of withstanding high temperature and high pressure, characterized in that,
the autoclave comprises a crystal pre-growth chamber and a crystal growth chamber connected with each other; a communication control apparatus is arranged at the communication between the abovementioned two chambers; the exteriors of the outer side and the bottom of the crystal pre-growth chamber and the exteriors of the outer side and the bottom of the crystal growth chamber are respectively provided with a heating apparatus; communication control apparatuses are arranged above each of the crystal pre-growth chamber and the crystal growth chamber, the communication control apparatuses above the crystal pre-growth chamber and the crystal growth chamber are connected with a gas storage tank through a gas delivery pipe.