| 发明名称 |
SCHOTTKY-BARRIER DEVICE AND RELATED SEMICONDUCTOR PRODUCT |
| 摘要 |
In one general aspect, a power rectifier device can include a drift layer including silicon carbide of n-type conductivity, and a Schottky electrode disposed on the drift layer where the Schottky electrode and a surface of the drift layer can provide a Schottky contact. The power rectifier device can also include an array of p-type regions disposed underneath the Schottky electrode. |
| 申请公布号 |
US2015295023(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201514750682 |
申请日期 |
2015.06.25 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KONSTANTINOV Andrei |
| 分类号 |
H01L29/06;H01L29/872;H01L29/10;H01L29/16 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power rectifier device, comprising:
a drift layer including silicon carbide of n-type conductivity; a Schottky electrode disposed on the drift layer, the Schottky electrode and a surface of the drift layer providing a Schottky contact; and an array of p-type regions disposed underneath the Schottky electrode. |
| 地址 |
San Jose CA US |
