SEMICONDUCTOR DEVICE MANUFACTURING AND PROCESSING METHODS AND APPARATUSES FOR FORMING A FILM

摘要

A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.

主权项

1. A method of manufacturing a semiconductor device comprising:
accommodating a substrate in a processing chamber; and forming a film including silicon and carbon on the substrate by supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated, wherein the forming of the film including silicon and carbon includes:
supplying the silicon-based gas and the amine-based gas into the processing chamber and exhausting the silicon-based gas and the amine-based gas from the processing chamber, while a state in which an exhaust rate of the silicon-based gas and the amine-based gas from the processing chamber is lower than a supply rate of the silicon-based gas and the amine-based gas into the processing chamber is maintained; andstopping supplying the silicon-based gas and the amine-based gas into the processing chamber, and exhausting an inside of the processing chamber.