DATA STORING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS

摘要

A data storing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a bit error count of every predetermined area of every physical erasing unit and determining whether the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than a threshold bit error count. If the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than the threshold bit error count, the method also includes storing data under a second programming mode after an erasing operation is performed on the physical easing unit. Accordingly, defective physical erasing units may be effectively employed to prolong the lifespan of the memory storage apparatus.

主权项

1. A data storing method for a rewritable non-volatile memory module having a plurality of physical erasing units, each of the physical erasing units having a plurality of physical programming units, the physical programming units comprising a plurality of lower physical programming units and a plurality of upper physical programming units, the data storing method comprising:
selecting a first physical erasing unit from the physical erasing units, wherein each of the physical programming units of the first physical erasing unit has one or more predetermined areas; storing first data with a first programming mode, wherein the first data is programmed into at least one of the lower physical programming units and at least one of the upper physical programming units of the first physical erasing unit; recording a bit error count of each of the one or more predetermined areas of the first physical erasing unit; determining whether the bit error count of at least one of the one or more predetermined areas of the physical programming units of the first physical erasing unit is more than a threshold bit error count; and if the bit error count of the at least one of the one or more predetermined areas of the physical programming units of the first physical erasing unit is more than the threshold bit error count, storing second data under a second programming mode after erasing the first data from the first physical erasing unit, wherein the required number of times of programming the rewritable non-volatile memory module under the first programming mode is more than the required number of times of programming the rewritable non-volatile memory module under the second programming mode.