FIELD EFFECT TRANSISTOR ION SENSOR AND SYSTEM USING SAME

摘要

Disclosed are a field effect transistor (FET) ion sensor and a system using the same. The FET ion sensor of the present invention includes a channel formed of a semiconductor and a gate insulating layer disposed on the top of the channel, wherein ion molecules are adsorbed to the surface of the channel, thereby allowing the gate insulating layer to be electrically charged such that the electric conductivity of the channel is changed.