STRUCTURE FOR THERMALLY ASSISTED MRAM

摘要

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.

主权项

1. A method of fabricating a thermally assisted magnetoresistive random access memory device (TAS-MRAM), the method comprising:
forming a bottom contact; forming a bottom thermal barrier on the bottom contact; forming a magnetic tunnel junction on the bottom thermal barrier, the magnetic tunnel junction including a top ferromagnetic layer formed on a tunnel barrier, the tunnel barrier being formed on a bottom ferromagnetic layer; forming a top thermal barrier on the top ferromagnetic layer; forming a top contact on the top thermal barrier; and reducing the top contact to a first diameter; wherein the tunnel barrier and the bottom ferromagnetic layer each have a second diameter, the first diameter of the top contact being smaller than the second diameter.