发明名称 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE |
摘要 |
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less. |
申请公布号 |
US2015295146(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201514747640 |
申请日期 |
2015.06.23 |
申请人 |
NICHIA CORPORATION |
发明人 |
IKEGAMI Takeshi;TAMAKI Hiroto |
分类号 |
H01L33/50;H01L33/54 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting device comprising:
at least one semiconductor light emitting element; and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element, wherein the wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element, and a content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less. |
地址 |
Anan-shi JP |