SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A first main surface of a silicon carbide substrate has a flat surface located in an element portion and a side wall surface located in a termination portion. The silicon carbide substrate has an impurity layer having a portion located at each of the flat surface of the first main surface and a second main surface. On the flat surface, a Schottky electrode is in contact with the impurity layer. On the second main surface, a counter electrode is in contact with the impurity layer. An insulating film covers the side wall surface. The side wall surface is inclined by not less than 50° and not more than 80° relative to a {000-1} plane. This suppresses the leakage current of a silicon carbide semiconductor device.

主权项

1. A silicon carbide semiconductor device having an element portion provided with a semiconductor element, and a termination portion surrounding said element portion, the silicon carbide semiconductor device comprising:
a silicon carbide substrate made of silicon carbide having a hexagonal single-crystal structure, said silicon carbide substrate having a first main surface and a second main surface opposite to said first main surface, said first main surface having a flat surface that is located in said element portion and a side wall surface that is located in said termination portion, that surrounds said flat surface, and that is inclined relative to said flat surface so as to come close to said second main surface, said silicon carbide substrate including an impurity layer having a first conductivity type, said impurity layer having a portion located at said flat surface of said first main surface; a Schottky electrode in contact with said impurity layer on said flat surface of said first main surface; a counter electrode provided on said second main surface; and an insulating film covering said side wall surface of said first main surface, said side wall surface being inclined by not less than 50° and not more than 80° relative to a {000-1} plane.