| 摘要 |
The purpose of the present invention is to provide: a liquid composition for semiconductor element cleaning, which is used in a production process of a semiconductor integrated circuit and removes hard mask or dry etching residues, while suppressing damage on a low dielectric constant interlayer insulating film, cobalt or a cobalt alloy; and a method for cleaning a semiconductor element using this liquid composition for semiconductor element cleaning. A liquid composition for semiconductor element cleaning according to the present invention contains 10-30% by mass of hydrogen peroxide, 0.005-0.7% by mass of potassium hydroxide, 0.00001-0.01% by mass of an amino polymethylene phosphonic acid, 0.001-5% by mass of at least one substance selected from among amines and azoles, and water. A semiconductor element can be cleaned by bringing this liquid composition for semiconductor element cleaning into contact with the semiconductor element. |
