发明名称 EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS
摘要 An extreme ultraviolet light generation system may include a beam focusing optics configured such that a pre-pulse laser beam and a main pulse laser beam are focused on a plasma generation region, and that a beam path axis of the pre-pulse laser beam and a beam path axis of the main pulse laser beam pass through the plasma generation region at an angle equal to or smaller than a loss-cone angle with respect to a central axis of a magnetic field that is generated by a magnetic field generator. A first laser apparatus and a second laser apparatus may be controlled such that, after a target outputted from a target generation unit has been irradiated with the pre-pulse laser beam in the plasma generation region, the target is irradiated with the main pulse laser beam with a delay time ranging from 0.5 μs or longer to 7 μs or shorter.
申请公布号 US2015296604(A1) 申请公布日期 2015.10.15
申请号 US201514729723 申请日期 2015.06.03
申请人 GIGAPHOTON INC. 发明人 NAGAI Shinji;SAITO Takashi
分类号 H05G2/00 主分类号 H05G2/00
代理机构 代理人
主权项 1. An extreme ultraviolet light generation system comprising: a first laser apparatus; a second laser apparatus; a chamber having a through-hole through which a pre-pulse laser beam outputted from the first laser apparatus and a main pulse laser beam outputted from the second laser apparatus pass; a magnetic field generator configured to generate a magnetic field in a region including a plasma generation region inside the chamber; a beam focusing optics configured such that the pre-pulse laser beam and the main pulse laser beam are focused on the plasma generation region and that a beam path axis of the pre-pulse laser beam and a beam path axis of the main pulse laser beam pass through the plasma generation region at an angle equal to or smaller than a loss-cone angle with respect to a central axis of the magnetic field that is generated by the magnetic field generator; a target generation unit; and an EUV light generation controller configured to control the first laser apparatus and the second laser apparatus such that, after a target outputted from the target generation unit has been irradiated with the pre-pulse laser beam in the plasma generation region, the target is irradiated with the main pulse laser beam with a delay time ranging from 0.5 μs or longer to 7 μs or shorter.
地址 Tochigi JP